Web电感耦合等离子体（ICP）刻蚀. ICP刻蚀是一种被广泛使用的技术，可提供高速率、高选择比以及低损伤的刻蚀。. 等离子体能够在低气压下保持稳定，因此能够更好地控制刻蚀形貌。. Cobra® ICP刻蚀源在低气压下仍可产生高密度的反应粒子。衬底上的直流偏压由 ... WebOXFORD Plasmalab 100-ICP 180 Plasmalab 100-ICP 180 Used OXFORD Plasmalab 100-ICP 180 for sale Manufacturer: OXFORD Model: Plasmalab 100-ICP 180 CAE has broad …
Did you know?
WebJan 6, 2024 · The piezoresistors were fabricated by ICP etching using Oxford ICP-180 system, and its. process parameters are shown in T able 2. An etching depth of 2.0. WebICP Inductively Coupled Plasma High Density Etching System. The Plasmalab System 100 ICP 180 is a load locked plasma etching system configured for reactive ion etching with …
WebOxford Instruments ICP 180. Plasma assisted etching of III-V semiconductor materials; Samples form 6x6mm on 4” Si-carrier up to 4“ wafer; Base pressure 6x10-7 Torr; Temperature controlled Stage –150°C to 400°C; CH 4, H 2, Cl 2, CF 4, SF 6, O 2, Ar, and N 2 SiCl4 available after special introduction by responsibles; RF 13.56 MHz 500W source http://wa.oxfordhouse.us/
WebOur Oxford ICP-RIE Plaslab 180 utilizes a 3kW RF power supply to generate a remote plasma of Cl2, BCl3, H2, Ar, NF3, O2, SF6, and/or C4F8 gas species that can be further accelerated (300W table bias) toward a substrate resulting in a combination of physical and chemical dry etching for material removal. Web1180 NW Maple Street, Suite 180 Issaquah, WA 98027. Follow; Follow; Contact Us. 877.216.1717 [email protected] ...
WebOxford Plasmalab 100 ICP Etcher System (ID# 4138) ClassOneEngineering 105 views 4 years ago Tepla 300 AL PC Plasma Asher (ID#4359) ClassOneEngineering 460 views 4 …
WebThis Oxford Plasmalab System 100/ICP 180 is a reactive ion etch system capable of deep etching through the use of Bosch and/or cryogenic processes. It can accommodate substrates ranging from small dies (on top of a carrier wafer) all the way up to standard 4' (100 mm) wafers with one flat. cleartool fmtWebOur Oxford ICP-RIE Plaslab 180 utilizes a 3kW RF power supply to generate a remote plasma of Cl2, BCl3, H2, Ar, NF3, O2, SF6, and/or C4F8 gas species that can be further accelerated … bluestone buyers agents saWebSpecifications Inductively coupled plasma (ICP) power source: up to 2500 W at 2.4 MHz. Radio frequency (RF) power source: up to 600 W at 13.56 MHz. Electrode temperature range: -150 °C to 300 °C. Unique process gases: octafluorocyclobutane (C 4 F 8 ), trifluormethane (CHF 3 ), and Sulfur Exafluoride (SF6). cleartool dump commandWebCAE finds the best deals on used OXFORD Plasmalab 100-ICP 180. We’re accountable for every transaction — CAE will seek to collect as much information as you require to ensure that you receive the equipment in the condition that you are expecting. Send us your request to buy a used OXFORD Plasmalab 100-ICP 180 and we will contact you with ... cleartool graphic view of treeWebOct 8, 2024 · The Oxford PlasmaPro100 ICP dielectric etcher is a system that allows anisotropic etching of silicon oxide and silicon nitride. The tool is equipped with multiple etch gases and a temperature-controlled electrode. The manual wafer load system can accommodate substrates ranging from 200 mm diameter wafers down to small pieces. blue stone breatheWebWashington Oxford 100 ICP-180 Cl2, BCl3, SF6, silicon 100mm 300C CH4, H2, N2, O2, Ar III-V's, Ti, Al Washington Oxford 100 ICP-180 SF6, C4F8, CHF3, N2O silicon 100mm cryo-chuck SiH4, N2, Ar, O2 silicon based SiO2-PECVD dielectrics, Nb, W, Ti metals, polymers. NNCI Dry Etch Capabilities bluestone cafe independence ohioWebHigh etch rate and high selectivity Low damage etch and high repeatability processing Single wafer load lock or clusterable with up to 5 process modules He backside cooling for optimum temperature control Wide … cleartool find private files